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ANISOTROPIE DE LA SURFACE D'EGALE ENERGIE DES SOLUTIONS SOLIDES A BASE DE TELLURURE DE BISMUTHKUTASOV VA; LUK'YANOVA LN.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 2; PP. 402-405; BIBL. 10 REF.Article

Mécanismes de diffusion et variation thermique de la masse effective des électrons dans les solutions solides à base de tellurure de bismuthGOL'TSMAN, B. M; IKONNIKOVA, G. N; KUTASOV, V. A et al.Fizika tverdogo tela. 1985, Vol 27, Num 2, pp 542-545, issn 0367-3294Article

Conductivité thermique des solutions solides à basse de tellurure de bismuthGOL'TSMAN, B. M; IKRONNIKOVA, G. N; KUTASOV, V. A et al.Fizika tverdogo tela. 1986, Vol 28, Num 7, pp 2218-2221, issn 0367-3294Article

ANALYSE SPECTRALE LOCALISEE PAR RAYONS X DE L'INHOMOGENEITE DU MATERIAU THERMOELECTRIQUE BI2TE3-XSEXGARTSMAN KG; DEDEGKAEV TT; BARASH AS et al.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 7; PP. 1210-1214; BIBL. 4 REF.Article

Electrical conduction and photoconduction in Se80-xTe20Bix thin filmsSURI, N; BINDRA, K. S; THANGARAJ, R et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 39, pp 9129-9134, issn 0953-8984, 6 p.Article

Experimental exploration of the scaling theory in 2DSOONPAA, H. H; SCHWALM, W. A.Physics letters. A. 1984, Vol 100, Num 3, pp 156-157, issn 0375-9601Article

GENERALISED PHONON DENSITY OF STATES OF THE LAYER COMPOUNDS BI2SE3, BI2TE3, SB2TE3 AND BI2(TE0.5SE0,5))3, (BI0.5SB0.5)2TE3RAUH H; GEICK R; KOEHLER H et al.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 20; PP. 2705-2712; BIBL. 14 REF.Article

Rapports des composantes du tenseur des masses effectives de la densité d'états et paramètre de dégénérescence dans les solutions solides à base de Bi2Te3KUTASOV, V. A; LUK'YANOVA, L. N.Fizika tverdogo tela. 1987, Vol 29, Num 10, pp 2966-2969, issn 0367-3294Article

Variation du paramètre d'anisotropie de Bi2Te3-n et de ses solutions solides en fonction de la concentrationKUTASOV, V. A; LUK'YANOVA, L. N.Fizika tverdogo tela. 1986, Vol 28, Num 3, pp 899-902, issn 0367-3294Article

Topology-Driven Magnetic Quantum Phase Transition in Topological InsulatorsJINSONG ZHANG; CHANG, Cui-Zu; KE HE et al.Science (Washington, D.C.). 2013, Vol 339, Num 6127, pp 1582-1586, issn 0036-8075, 5 p.Article

Experimental Studies on Anisotropic Thermoelectric Properties and Structures of n-Type Bi2Te2.7Se0.3XIAO YAN; POUDEL, Bed; YI MA et al.Nano letters (Print). 2010, Vol 10, Num 9, pp 3373-3378, issn 1530-6984, 6 p.Article

Robust surface state of intrinsic topological insulator Bi2Te2Se thin films: a first-principles studyDAI, Xian-Qi; BAO ZHAO; ZHAO, Jian-Hua et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 3, issn 0953-8984, 035502.1-035502.6Article

Laser physical vapor deposition of nanocrystalline dots using nanopore filtersJAGANNADHAM, K; HOWE, J; ALLARD, L. F et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 98, Num 2, pp 285-292, issn 0947-8396, 8 p.Article

Fabrication and thermoelectric properties of n-type SbI3-doped Bi2Te2.85Se0.15 compounds by hot extrusionSEAL, J; PARK, K; LEE, C et al.Materials research bulletin. 1998, Vol 33, Num 4, pp 553-559, issn 0025-5408Article

Electrical resistivity of thin films of Bi2Te3:Sb, Sn, SeDESAI, C. F; KOTAK; BHAVSAR, S. R et al.SPIE proceedings series. 2000, pp 1468-1471, isbn 0-8194-3601-1Conference Paper

Manifestation of the interlayer interaction effects in the electroreflection spectra of (Bi2Te3)x(Bi2Se3)1-x crystalsVELIYULIN, E. I; KAKHRAMANOV, S. S; EVSTIGNEEV, A. M et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 11, pp 1281-1282, issn 0038-5700, 2 p.Article

Monocrystalline structure of Bi2Te3―Bi2Se3 with a p―n junctionLOSTAK, P; HORAK, J; NOVOTNY, R et al.Journal of materials science letters. 1987, Vol 6, Num 12, pp 1469-1470, issn 0261-8028Article

Thermoelectricity: phase diagrams and imperfection structures IITUOMI, D.Intersociety energy conversion engineering conference. 15. 1980, pp 1853-1861Conference Paper

Optical and electrical studies of as-prepared and annealed Se-Te-Bi thin filmsSURI, N; BINDRA, K. S; AHMAD, M et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 90, Num 1, pp 149-151, issn 0947-8396, 3 p.Article

Transport properties of thermoelectric Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 thin filmsBOURGAULT, D; SCHAECHNER, B; GIROUD GARAMPON, C et al.Journal of alloys and compounds. 2014, Vol 598, pp 79-84, issn 0925-8388, 6 p.Article

Direct Atom-by-Atom Chemical Identification of Nanostructures and Defects of Topological InsulatorsYING JIANG; YONG WANG; SAGENDORF, Jared et al.Nano letters (Print). 2013, Vol 13, Num 6, pp 2851-2856, issn 1530-6984, 6 p.Article

Optical properties of Bi2Te2Se thin filmsSHOKR, E. K; WAKKAD, M. M.Journal of materials science. 1992, Vol 27, Num 5, pp 1197-1201, issn 0022-2461Article

Oriented mosaic model analysis of anisotropic thermoelectric properties of heterogeneous materialsWADA, H; OKAMOTO, Y; MIYAKAWA, T et al.Journal of materials science. 1992, Vol 27, Num 4, pp 881-888, issn 0022-2461Article

Photopyroelectric (PPE) determination of thermal diffusivity of Bi2Te2.85Se0.15 sintered thermoelectric semiconductorsWADA, H; WATANABE, M; MORIMOTO, J et al.Journal of materials research. 1991, Vol 6, Num 8, pp 1711-1714, issn 0884-2914, 4 p.Article

Investigation of vacuum deposition of Bi2Te3: based thermoelectric materialsBORKOWSKI, K; PRZYŁUSKI, J.Materials research bulletin. 1987, Vol 22, Num 3, pp 381-387, issn 0025-5408Article

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